Nanostructured Transition Metal Dichalcogenide Multilayers for Advanced Nanophotonics

Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown be highly promising for nanophotonic applications, as motivated by exceptionally high refractive indices optical anisotropy. Here, this vision is extended more sophisticated structures, such periodic arrays of nanodisks nanoholes with ultra sharp walls, well proof-of-concept all-TMD waveguides resonators. Specific focus given various advanced nanofabrication strategies, including careful selection resists electron beam lithography etching methods, especially non-conductiven but relevant applications substrates, SiO2. The specific materials studied here include semiconducting WS2, in-plane anisotropic ReS2, metallic TaSe2, TaS2, NbSe2. resulting nanostructures can potentially impact several optoelectronic areas, high-index nanophotonics, plasmonics on-chip circuits. knowledge TMD material-dependent parameters developed will help broaden the scope future nanophotonics.